Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
暂无分享,去创建一个
Hyunsang Hwang | Myungwoo Son | Jubong Park | Xinjun Liu | Joonmyoung Lee | H. Hwang | M. Son | Joonmyoung Lee | Jubong Park | Sangsu Park | S. Sadaf | Xinjun Liu | Jungho Shin | Sangsu Park | Jungho Shin | Sharif Md Sadaf
[1] K. L. Chopra,et al. Current-controlled negative resistance in thin niobium oxide films , 1963 .
[2] D. V. Geppert. A new negative-resistance device , 1963 .
[3] T. W. Hickmott,et al. BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES , 1965 .
[4] D. Morgan,et al. Electrical phenomena in amorphous oxide films , 1970 .
[5] K. Steenbeck,et al. Electrical switching behaviour of niobium oxide thin films , 1974 .
[6] H. Pagnia,et al. Bistable switching in electroformed metal–insulator–metal devices† , 1988 .
[7] I. Barin. Thermochemical data of pure substances , 1989 .
[8] A. Pergament,et al. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal-Insulator Transition in the Switching Mechanism , 1996 .
[9] S. Seo,et al. Reproducible resistance switching in polycrystalline NiO films , 2004 .
[10] K. Terabe,et al. Quantized conductance atomic switch , 2005, Nature.
[11] H. Hwang,et al. Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application , 2005 .
[12] Paul D Franzon,et al. Scaling constraints in nanoelectronic random-access memories , 2005, Nanotechnology.
[13] Young-soo Park,et al. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .
[14] Bonnie A. Sheriff,et al. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre , 2007, Nature.
[15] S. H. Jeon,et al. A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories , 2007 .
[16] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[17] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[18] I. Baek,et al. High‐Current‐Density CuO x/InZnOx Thin‐Film Diodes for Cross‐Point Memory Applications , 2008 .
[19] Elena Cianci,et al. Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition , 2008 .
[20] Cheol Seong Hwang,et al. (In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array , 2008 .
[21] J. Yang,et al. A Family of Electronically Reconfigurable Nanodevices , 2009 .
[22] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[23] Young-soo Park,et al. Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory , 2009 .
[24] Insung Kim,et al. Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices , 2010 .
[25] Rainer Waser,et al. Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.
[26] B. Kang,et al. Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure , 2010 .
[27] Hyunsang Hwang,et al. Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications , 2010 .
[28] B. Park,et al. Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film , 2010 .
[29] Cheol Seong Hwang,et al. A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays , 2010, Nanotechnology.
[30] Gregory S. Snider,et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.
[31] S. Ramanathan,et al. Nanoscale imaging and control of resistance switching in VO2 at room temperature , 2010 .
[32] B. Park,et al. Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components , 2011 .
[33] Julien Borghetti,et al. Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System , 2011, Advanced materials.
[34] Qing-Qing Sun,et al. Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application , 2011 .
[35] Ping Hu,et al. Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory , 2011 .
[36] Seung Chul Chae,et al. Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory , 2011, Advanced materials.
[37] H. Hwang,et al. TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application , 2011 .