A new SnO2 low temperature deposition technique for integrated gas sensors

Abstract A new SnO 2 low temperature deposition technique for integrated gas sensors is presented. Two different film thicknesses are investigated, as well as different catalysts. A correlation is established between the deposition parameters, the texture of the layers and the gas sensitivities. An explanation for the quite different behaviours of these layers is proposed. The best results are obtained with the thinner film gas sensors, for which Schottky barriers are formed between grains after thermal oxidation. A comparison between these integrated gas sensors and conventional sintered ones shows the major advantages of the integrated sensors.