An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser

We have fabricated a p-type delta-doped InGaAs-GaAs quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) with a low-resistance GaAs-AlAs distributed Bragg reflector (DBR). The threshold was as low as 700 /spl mu/A for 10/spl times/10 /spl mu/m/sup 2/ devices. A penalty-free 10-Gb/s transmission experiment with a 100-m-long multimode fiber was performed using fabricated VCSELs. The modulation speed was up to 12 Gb/s, which was limited by an RC constant. Further threshold reduction and high-speed operation can be expected by controlling the doping concentration in p-type delta-doped layers.

[1]  F. Koyama,et al.  Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon , 1997 .

[2]  Kazuhisa Uomi,et al.  Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory , 1990 .

[3]  Kent D. Choquette,et al.  High-frequency modulation of oxide- confined vertical cavity surface emitting lasers , 1996 .

[4]  K. Lau,et al.  Ultralow power optical interconnect with zero-biased, ultralow threshold laser-how low a threshold is low enough? , 1995, IEEE Photonics Technology Letters.

[5]  P. Dapkus,et al.  Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors , 1995, IEEE Photonics Technology Letters.

[6]  N. Dutta,et al.  Transmission experiments using oxide confined vertical cavity surface emitting lasers , 1997 .

[7]  Kenichi Iga,et al.  Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure , 1995 .

[8]  J. Bowers,et al.  1.54-μm vertical-cavity surface-emitting laser transmission at 2.5 Gb/s , 1997, IEEE Photonics Technology Letters.

[9]  Rainer Michalzik,et al.  High-bit-rate data transmission with short-wavelength oxidized VCSELs, toward bias-free operation , 1997 .

[10]  K. Geib,et al.  Low threshold voltage vertical-cavity lasers fabricated by selective oxidation , 1994 .

[11]  F. Koyama,et al.  Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine , 1997 .

[12]  Diana L. Huffaker,et al.  Low threshold half-wave vertical-cavity lasers , 1994 .

[13]  Karl Joachim Ebeling,et al.  Top Surface-Emitting Vertical-Cavity r Diodes for lO-Gb/s Data Tra , 1996 .