High performance MEMS inductors fabricated on localised and planar thick SiO2 layer

High performance MEMS RF inductors fabricated on thick oxide layers using a process platform so-called SiDeox (silicon deep etching and oxidation) technology are presented. Deep reactive ion etching (DRIE) was performed to form 20 µm deep trenches of 2 µm wide trenches and silicon beams in the silicon substrate. DRIE etched silicon wafer was then thermally oxidised in the thermal furnace to form 20 µm-thick SiO2. RF inductors were fabricated on this thick SiO2 with high quality factors and self-resonance frequency.

[1]  J. Burghartz Progress in RF inductors on silicon-understanding substrate losses , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  R. Meyer,et al.  Si IC-compatible inductors and LC passive filters , 1990 .

[3]  Hongrui Jiang,et al.  On-chip spiral inductors suspended over deep copper-lined cavities , 2000 .

[4]  Jianmin Miao,et al.  Study of deep silicon etching for micro-gyroscope fabrication , 2001 .

[5]  Chunbo Zhang,et al.  Fabrication of thick silicon dioxide layers using DRIE, oxidation and trench refill , 2002, Technical Digest. MEMS 2002 IEEE International Conference. Fifteenth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.02CH37266).

[6]  One-mask process for silicon accelerometers on Pyrex glass utilising notching effect in inductively coupled plasma DRIE , 2003 .