Modeling and characterization of electromigration failures under bidirectional current stress

Electromigration reliability of different metallization systems (Al-2%Si, Al-Cu/TiW, Cu, and TiN/Al-2%Si/TiN) and structures (Al-via and W-plug) under bidirectional current stress has been studied in a wide frequency range (from mHz to 200 MHz). The experimental results show that at low frequency, the damage healing factor and lifetime under ac stress increases with frequency. At very high-frequency regions, the pure ac lifetime was found to be determined by the thermal process (caused by asymmetrical geometry, etc.) instead of electromigration. All the observations are in agreement with an average current model.

[1]  J. R. Lloyd,et al.  Study of Electromigration-Induced Resistance and Resistance Decay in A1 Thin Film Conductors , 1987, 25th International Reliability Physics Symposium.

[2]  C. Hu,et al.  An electromigration failure model for interconnects under pulsed and bidirectional current stressing , 1994 .

[3]  C. Ting,et al.  Selective electroless copper for VLSI interconnection , 1989, IEEE Electron Device Letters.

[4]  Conyers Herring,et al.  Stress generation by electromigration , 1976 .

[5]  C. Hu,et al.  Metal electromigration damage healing under bidirectional current stress , 1993, IEEE Electron Device Letters.

[6]  J. Maiz Characterization of electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents , 1989 .

[7]  C. G. Shirley Steady‐state temperature profiles in narrow thin‐film conductors , 1985 .

[8]  W. Hunter,et al.  AC electromigration characterization and modeling of multilayered interconnects , 1993, 31st Annual Proceedings Reliability Physics 1993.

[9]  Jiang Tao,et al.  Electromigration reliability of tungsten and aluminum vias and improvements under AC current stress , 1993 .

[10]  Chenming Hu,et al.  Projecting interconnect electromigration lifetime for arbitrary current waveforms , 1990 .

[11]  Modeling electromigration failures in TiN/Al-alloy/TiN interconnects and TiN thin films , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[12]  J. Black,et al.  Electromigration—A brief survey and some recent results , 1969 .

[13]  J. Tao,et al.  Electromigration characteristics of copper interconnects , 1993, IEEE Electron Device Letters.