Active Gate Control in Half-Bridge Inverters Using Programmable Gate Driver ICs to Improve Both Surge Voltage and Converter Efficiency

The requirements for peripheral circuits of power converters are becoming more restrictive due to the enhancement of Si-based power devices and due to practical use of SiC device. In the design of modern high-speed switching converters, the stray inductances and capacitances both in the device package and in the gate drive circuit in addition to those in the main circuit of the power converter must be considered. In these situations, the gate driving technique represents the key technology for enhancement of high-speed switching ability of power devices, as there are design limitations to reduce the stray inductances and capacitances. So far, several active gate control methods have been proposed. Most conventional active gate drivers are configured using analog circuits such as transistors and diodes. Thus, it is difficult to reconfigure their control parameters to fit the stray inductances and capacitances after the implementation of power converter and gate circuits. As a solution to these problems, the authors have proposed a programmable gate driver IC, which is a digitally controlled circuit. This gate driver IC can control the gate current at 63 separate levels, operated by programmable fully digital 12-bit and clock signals. In this paper, an active gate current control based on the load current in a half-bridge inverter with two programmable gate driver ICs is demonstrated. This developed gate control is different to the general current feedback control followed the reference value. It is verified that the proposed active gate control can effectively improve the tradeoff relationship between the surge voltage and switching loss of the pulsewidth modulation half-bridge inverter circuit.

[1]  Takashi Masuzawa,et al.  Modeling Method of Stray Magnetic Couplings in an EMC Filter for Power Electronic Devices , 2015 .

[2]  Bernard H. Stark,et al.  Crosstalk suppression in a 650-V GaN FET bridgeleg converter using 6.7-GHz active gate driver , 2017, 2017 IEEE Energy Conversion Congress and Exposition (ECCE).

[3]  Jeremy J. O. Dalton,et al.  Reduction of oscillations in a GaN bridge leg using active gate driving with sub-ns resolution, arbitrary gate-resistance patterns , 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

[4]  Masanori Tsukuda,et al.  General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm , 2017, IEEE Transactions on Industry Applications.

[5]  Alex Lidow,et al.  A new family of GaN transistors for highly efficient high frequency DC-DC converters , 2015, 2015 IEEE Applied Power Electronics Conference and Exposition (APEC).

[6]  R. Burgos,et al.  Active dv/dt control of 600V GaN transistors , 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

[7]  Bernard H. Stark,et al.  Shaping switching waveforms in a 650 V GaN FET bridge-leg using 6.7 GHz active gate drivers , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).

[8]  Masanori Tsukuda,et al.  General-purpose clocked gate driver (CGD) IC with programmable 63-level drivability to reduce Ic overshoot and switching loss of various power transistors , 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

[9]  L. Tolbert,et al.  Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration , 2015, 2015 IEEE Applied Power Electronics Conference and Exposition (APEC).

[10]  Kamalesh Hatua,et al.  Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout , 2016, IEEE Transactions on Industry Applications.

[11]  Nadir Idir,et al.  Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors , 2006, IEEE Transactions on Power Electronics.

[12]  Marco Liserre,et al.  Gate driver for the active thermal control of a DC/DC GaN-based converter , 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

[13]  Wei Liang,et al.  13.56 MHz High Density DC–DC Converter With PCB Inductors , 2013, IEEE Transactions on Power Electronics.

[14]  P. D. Evans,et al.  Electromagnetic considerations in power electronic converters , 2001, Proc. IEEE.

[15]  J. Kolar,et al.  Closed-Loop di/dt and dv/dt IGBT Gate Driver , 2015 .

[16]  Leon M. Tolbert,et al.  A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules , 2014, IEEE Transactions on Power Electronics.

[17]  Xinke Wu,et al.  Analysis of stray inductance's influence on SiC MOSFET switching performance , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[18]  Yukihiko Sato,et al.  Active voltage control of SiC-SIT circuit breakers for overvoltage suppression , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[19]  Xueqiang Zhang,et al.  Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation , 2015, IEEE Transactions on Industry Applications.

[20]  Koji Orikawa,et al.  Experimental verification of an EMC filter used for PWM inverter with wide band-gap devices , 2014 .