Laser produced plasma light source for EUVL

This paper describes the development of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source architecture for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193 nm immersion technology for sub-22 nm critical layer patterning. In this paper we discuss the most recent results from high qualification testing of sources in production. Subsystem performance will be shown including collector protection, out-of-band (OOB) radiation measurements, and intermediate-focus (IF) protection as well as experience in system use. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for an HVM source.