论文信息 - The wet-topotaxial process of junction formation and surface treatments of Cu2S–CdS thin-film solar cells

The wet-topotaxial process of junction formation and surface treatments of Cu2S–CdS thin-film solar cells

Abstract The particular properties of Cu2S–CdS heterojunctions are revealed. The effects of lattice mismatch on epitaxy as well as wet- and dry-topotaxy are discussed and preconditions for successful application of topotaxy are elaborated. The influence of surface treatments of the cells and of additional semiconducting or metallic layers of monolayer-range thicknesses at the surface is demonstrated. The junction formation technology and the surface treatments appear to be relevant also to other photovoltaic devices.

F. Pfisterer | Fritz Pfisterer

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