论文信息 - The ${\sim } 3\,{\times } 10^{20}$ cm $^{-3}$ Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing - 字舞流文

The ${\sim } 3\,{\times } 10^{20}$ cm $^{-3}$ Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing

C. Huang | C. W. Liu | Fang-Liang Lu | S. Huang | W.L. Huang | W. Huang