A theoretical and experimental approach to the active-to-passive transition in the oxidation of silicon carbide: Experiments at high temperatures and low total pressures
暂无分享，去创建一个
[1] T. Hirai,et al. High‐Temperature Active Oxidation and Active‐to‐Passive Transition of Chemically Vapor‐Deposited Silicon Nitride in N2–O2 and Ar–O2 Atmospheres , 1994 .
[2] M. Bacos,et al. High-temperature oxidation of silicon carbide in simulated atmospheric re-entry conditions , 1992 .
[3] T. Hirai,et al. High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O2 Atmosphere , 1991 .
[4] R. E. Tressler,et al. Oxidation Kinetics of Silicon Carbide Crystals and Ceramics: I, In Dry Oxygen , 1986 .
[5] H. C. Graham,et al. Oxidation of Si3N4 in the Range 1300° to 1500°C , 1976 .
[6] H. C. Graham,et al. The Active Oxidation of Si and SiC in the Viscous Gas‐Flow Regime , 1976 .
[7] D. E. Rosner,et al. High-temperature kinetics of the oxidation and nitridation of pyrolytic silicon carbide in dissociated gases , 1970 .
[8] E. A. Gulbransen,et al. The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10 − 3 to 5 × 10 − 1 Torr Oxygen Pressure , 1966 .
[9] D. R. Stull. JANAF thermochemical tables , 1966 .
[10] G. Ervin. Oxidation Behavior of Silicon Carbide , 1958 .