Long-term stability of ion-sensitive field effect transistors: Si3N4, Al2O3, and Ta2O5 membranes drift

Long-term stability of ion sensitive field effect transistors with inorganic membranes, dependent on the time drift phenomena is analyzed. The results presented in the paper relate to the Si3N4, Al2O3 and Ta2O5 membranes pH-ISFETs drift with the respect to the following parameters: sensitivity, linearity, linear time drift coefficient of threshold voltage and hysteresis.