Virtual crystal description of III–V semiconductor alloys in the tight binding approach
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[1] Stepan S. Tsirkin,et al. Unfolding spinor wave functions and expectation values of general operators: Introducing the unfolding-density operator , 2014, 1409.5343.
[2] A. Bokhanchuk,et al. Unfolding the band structure of disordered solids: from bound states to high-mobility Kane fermions , 2014, 1405.4218.
[3] M. Zieliński. Including strain in atomistic tight-binding Hamiltonians: An application to self-assembled InAs/GaAs and InAs/InP quantum dots , 2012 .
[4] Gerhard Klimeck,et al. Enhanced Valence Force Field Model for the Lattice Properties of Gallium Arsenide , 2011 .
[5] Voicu Popescu,et al. Effective band structure of random alloys. , 2010, Physical review letters.
[6] Gerhard Klimeck,et al. Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization , 2010 .
[7] C. Tavernier,et al. Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys , 2009, 0902.0491.
[8] Ronald B. Morgan,et al. Deflated and Restarted Symmetric Lanczos Methods for Eigenvalues and Linear Equations with Multiple Right-Hand Sides , 2008, SIAM J. Sci. Comput..
[9] P. Voisin,et al. Tetragonal and trigonal deformations in zinc-blende semiconductors: A tight-binding point of view , 2007, cond-mat/0703030.
[10] Gerhard Klimeck,et al. Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations , 2007, Journal of Physics: Condensed Matter.
[11] P. Vogl,et al. Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements , 2004 .
[12] Ron Kaspi,et al. Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps , 2003 .
[13] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[14] Herschel Rabitz,et al. Universal tight-binding calculation for the electronic structure of the quaternary alloy In 1-x Ga x As 1-y P y , 1998 .
[15] Fabio Beltram,et al. Empirical spds^* tight-binding calculation for cubic semiconductors : general method and material parameters , 1998 .
[16] Ferreira,et al. Electronic properties of random alloys: Special quasirandom structures. , 1990, Physical review. B, Condensed matter.
[17] Kisiel,et al. Model of the local structure of random ternary alloys: Experiment versus theory. , 1985, Physical review. B, Condensed matter.
[18] J. B. Boyce,et al. Atomic-Scale Structure of Random Solid Solutions: Extended X-Ray-Absorption Fine-Structure Study of Ga 1 − x In x As , 1982 .
[19] P. N. Keating,et al. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure , 1966 .
[20] J. C. Slater,et al. Simplified LCAO Method for the Periodic Potential Problem , 1954 .
[21] P. Löwdin. On the Non‐Orthogonality Problem Connected with the Use of Atomic Wave Functions in the Theory of Molecules and Crystals , 1950 .
[22] P. Voisin,et al. Theory and Modelling for the Nanoscale: The spds* Tight Binding Approach , 2012 .
[23] Glas. Correlated static atomic displacements and transmission-electron-microscopy contrast in compositionally homogeneous disordered alloys. , 1995, Physical review. B, Condensed matter.