论文信息 - Analytical quantum mechanical model for accumulation capacitance of MOS structures

Analytical quantum mechanical model for accumulation capacitance of MOS structures

We propose a new analytical model to quantitatively simulate capacitance-voltage (C-V) characteristics under accumulation conditions in metal-oxide-semiconductor structures. Based on the exponential potential, we have obtained the exact solution of the Schrodinger equation for all bound states that are consistent with quantum statistics and Gauss' law. The calculated C-V curves are in good agreement with measured ones by using the proposed model. One can easily obtain the results equivalent to full numerical solutions based on our model.

[1] E. Vogel,et al. A comparison of quantum-mechanical capacitance-voltage simulators , 2001, IEEE Electron Device Letters.

[2] Andrea L. Lacaita,et al. Polysilicon quantization effects on the electrical properties of MOS transistors , 2000 .

[3] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[4] Yuan Taur,et al. Fundamentals of Modern VLSI Devices , 1998 .

[5] Y. Taur,et al. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's , 1997, IEEE Electron Device Letters.

[6] A. Tasch,et al. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs , 2001, IEEE Electron Device Letters.

[7] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .