Influence of Deposition Conditions and Ion-Plasma Treatment of Thin Cobalt Films on Their Electrical Resistivity

[1]  Q. Le,et al.  Controlled cobalt recess for advanced interconnect metallization , 2019, Microelectronic Engineering.

[2]  D. Gall,et al.  Resistivity scaling and electron surface scattering in epitaxial Co(0001) layers , 2019, Journal of Applied Physics.

[3]  D. Gall,et al.  Resistivity and surface scattering of (0001) single crystal ruthenium thin films , 2019, Journal of Vacuum Science and Technology.

[4]  Qiang Huang,et al.  Effects of Dimethylglyoxime and Cyclohexane Dioxime on the Electrochemical Nucleation and Growth of Cobalt , 2018, Journal of The Electrochemical Society.

[5]  S. Branagan,et al.  Mechanism of Cobalt Bottom-Up Filling for Advanced Node Interconnect Metallization , 2018, Journal of The Electrochemical Society.

[6]  B. Haran,et al.  Annealing and Impurity Effects in Co Thin Films for MOL Contact and BEOL Metallization , 2018, Journal of The Electrochemical Society.

[7]  A. S. Dzhumaliev,et al.  Influence of Annealing and Argon Pressure on the Microcrystalline Structure of Magnetron-Sputtered Textured Cobalt Films , 2018, Technical Physics.

[8]  D. Gall Metals for Low-Resistivity Interconnects , 2018, 2018 IEEE International Interconnect Technology Conference (IITC).

[9]  Christopher J. Wilson,et al.  Sub-100 nm2 Cobalt Interconnects , 2018, IEEE Electron Device Letters.

[10]  Shi-Li Zhang,et al.  Highly conductive ultrathin Co films by high-power impulse magnetron sputtering , 2018 .

[11]  Mehul Naik,et al.  Cobalt fill for advanced interconnects , 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

[12]  M. O. Izyumov,et al.  Low energy selective etching of metal films in oxygen-containing high-density argon plasma , 2016, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

[13]  D. Gall Electron mean free path in elemental metals , 2016 .

[14]  K. Croes,et al.  Cobalt bottom-up contact and via prefill enabling advanced logic and DRAM technologies , 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

[15]  S. Bhattacharjee,et al.  Experimental investigation of change in sheet resistance and Debye temperatures in metallic thin films due to low-energy ion beam irradiation , 2013 .

[16]  M. O. Izyumov,et al.  The effect of ion energy on the surface morphology of platinum film under high-frequency ion plasma sputtering , 2013 .

[17]  Daniel Josell,et al.  Size-Dependent Resistivity in Nanoscale Interconnects , 2009 .

[18]  L. Freund,et al.  Origin of compressive residual stress in polycrystalline thin films. , 2002, Physical review letters.

[19]  E. H. Sondheimer,et al.  The mean free path of electrons in metals , 2001 .

[20]  Y. Namba,et al.  Resistivity and Temperature Coefficient of Thin Metal Films with Rough Surface , 1970 .

[21]  M. Shatzkes,et al.  Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces , 1970 .

[22]  Cary Y. Yang,et al.  On-Chip Interconnect Conductor Materials for End-of-Roadmap Technology Nodes , 2018, IEEE Transactions on Nanotechnology.

[23]  K. L. Chopra,et al.  Thin Film Phenomena , 1969 .