A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology

We report a high-efficiency D-band power amplifier in 250nm InP HBT technology. The design has three common-base stages and a low-loss 4:1 transmission-line output power combiner. The amplifier has 20.5 dBm peak saturated output power with 20.8% PAE and 15dB associated large-signal gain at 140GHz. At 1dB gain compression, the output power is 17dBm with 9.7% PAE. The amplifier's peak small-signal gain is 20.3dB at 140GHz, and the small-signal 3-dB bandwidth is 120-163GHz. Over a 125-150GHz bandwidth, the saturated output power is within 2dB of its 140GHz maximum, with an associated PAE greater than 14.3%. The amplifier consumes 0.52W DC power and occupies 0.69mm2 area. To the authors' knowledge, this result improves the state-of-the-art peak PAE at 140GHz by 1.6:1 for amplifiers of comparable saturated output power.

[1]  C. Weitzel,et al.  RF power amplifiers for wireless communications , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[2]  Z. Griffith,et al.  Multi-finger 250nm InP HBTs for 220GHz mm-wave power , 2012, 2012 International Conference on Indium Phosphide and Related Materials.

[3]  Zach Griffith,et al.  A 180mW InP HBT Power Amplifier MMIC at 214 GHz , 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[4]  Peter M. Asbeck,et al.  Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers , 2013, IEEE Transactions on Microwave Theory and Techniques.

[5]  Borhanuddin Mohd Ali,et al.  Power Amplifiers in Wireless Communications , 2014 .

[6]  Bernd Heinemann,et al.  A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology , 2017, IEEE Microwave and Wireless Components Letters.

[7]  Munkyo Seo,et al.  InP HBT Technologies for THz Integrated Circuits , 2017, Proceedings of the IEEE.

[8]  A. Farid,et al.  204GHz Stacked-Power Amplifiers Designed by a Novel Two-Port Technique , 2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC).

[9]  J. Wu,et al.  100-340GHz Systems: Transistors and Applications , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[10]  Patrick Reynaert,et al.  A 14.8 dBm 20.3 dB Power Amplifier for D-band Applications in 40 nm CMOS , 2018, 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[11]  M. Urteaga,et al.  8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology , 2018, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

[12]  Zach Griffith,et al.  A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT , 2019, IEEE Microwave and Wireless Components Letters.

[13]  Dietmar Kissinger,et al.  An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network , 2019, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC).

[14]  Mark J. W. Rodwell,et al.  A Broadband Direct Conversion Transmitter/Receiver at D-band Using CMOS 22nm FDSOI , 2019, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

[15]  Steven Brebels,et al.  A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak Psat at 13% PAE , 2019, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC).

[16]  Zach Griffith,et al.  A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT , 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).

[17]  A. S. Ahmed,et al.  A 200mW D-band Power Amplifier with 17.8% PAE in 250-nm InP HBT Technology , 2021, 2020 15th European Microwave Integrated Circuits Conference (EuMIC).