A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology
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A. S. Ahmed | M. Seo | A. Farid | M. Urteaga | J. Buckwalter | M. Rodwell | A. Ahmed
[1] C. Weitzel,et al. RF power amplifiers for wireless communications , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
[2] Z. Griffith,et al. Multi-finger 250nm InP HBTs for 220GHz mm-wave power , 2012, 2012 International Conference on Indium Phosphide and Related Materials.
[3] Zach Griffith,et al. A 180mW InP HBT Power Amplifier MMIC at 214 GHz , 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
[4] Peter M. Asbeck,et al. Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers , 2013, IEEE Transactions on Microwave Theory and Techniques.
[5] Borhanuddin Mohd Ali,et al. Power Amplifiers in Wireless Communications , 2014 .
[6] Bernd Heinemann,et al. A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology , 2017, IEEE Microwave and Wireless Components Letters.
[7] Munkyo Seo,et al. InP HBT Technologies for THz Integrated Circuits , 2017, Proceedings of the IEEE.
[8] A. Farid,et al. 204GHz Stacked-Power Amplifiers Designed by a Novel Two-Port Technique , 2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC).
[9] J. Wu,et al. 100-340GHz Systems: Transistors and Applications , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).
[10] Patrick Reynaert,et al. A 14.8 dBm 20.3 dB Power Amplifier for D-band Applications in 40 nm CMOS , 2018, 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
[11] M. Urteaga,et al. 8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology , 2018, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
[12] Zach Griffith,et al. A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT , 2019, IEEE Microwave and Wireless Components Letters.
[13] Dietmar Kissinger,et al. An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network , 2019, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC).
[14] Mark J. W. Rodwell,et al. A Broadband Direct Conversion Transmitter/Receiver at D-band Using CMOS 22nm FDSOI , 2019, 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
[15] Steven Brebels,et al. A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak Psat at 13% PAE , 2019, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC).
[16] Zach Griffith,et al. A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT , 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).
[17] A. S. Ahmed,et al. A 200mW D-band Power Amplifier with 17.8% PAE in 250-nm InP HBT Technology , 2021, 2020 15th European Microwave Integrated Circuits Conference (EuMIC).