Fast Epitaxial Growth of 4H–SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

4H–SiC has been homoepitaxially grown on off-axis 4H–SiC(0001) at 1700°C by chimney-type vertical hot-wall chemical vapor deposition. Mirror-like surface morphology can be obtained with high growth rates up to 21 µm/h. Epitaxial growth under C-rich conditions at growth rates of 10–14 µm/h leads to enhanced macrostep formation but reduced doping and deep trap concentrations of 7.2×1014 cm-3 and 1.3×1013 cm-3, respectively. Good thickness and doping uniformities of 4% and 6%, respectively, are achieved with this growth technique.