论文信息 - 1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique -- Achieves 1.0ns/200ps Wake-Up/Power-Off Times - 字舞流文

1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique -- Achieves 1.0ns/200ps Wake-Up/Power-Off Times

Hanyu Takahiro | Endoh Tetsuo | Ohno Hideo | Koike Hiroki | Ohsawa Takashi | Miura Sadahiko | Honjo Hiroaki | Tokutome Keiichi | Ikeda Shoji