650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches

We present a SiC Trench JFET technology that achieves a record setting specific on-resistance (RDSA) of 0.75mohm.cm2. These SiC devices are combined with optimized low voltage MOSFETs to form co-packaged cascode transistors, which provide unprecedented performance benefits, with a clear path to direct cost parity with silicon superjunction devices. These devices are shown to be useful for all circuit topologies..