Thin TiO2 Films Prepared by Low Pressure Chemical Vapor Deposition

The preparation and the properties of titanium dioxide (TiO 2 ) thin films have been studied with respect to its application as a new capacitor dielectric material in low-power high-density dynamic random access memory ultralarge scale integrated circuits. The TiO 2 films were deposited by a low pressure metal organic chemical vapor deposition process with tetra-iso-propyltitanate as the precursor metal organic material. The deposition was performed in a hot wall-type vertical furnace at low temperatures (300-350 o C)