A revised model for carrier trapping-detrapping noise

Abstract The model presented here is an extension of the carrier trapping-detrapping model for 1 f noise, in semiconductor devices with interfaces formed by oxide or insulating layers. The validity of the conventional assumptions, currently used to explain trapping-detrapping 1 f noise, is discussed and a revised set of assumptions is proposed. It is shown that 1 f noise that is caused by electron trapping and detrapping at oxide interfaces, can be explained for a wide variety of activation barrier distributions, assuming the revised set of assumptions.

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