Impact of minority carrier lifetime on the performance of strained germanium light sources

[1]  Jérôme Faist,et al.  1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications , 2015 .

[2]  C. O. Chui,et al.  Investigation of Germanium Quantum-well Light Sources References and Links , 2022 .

[3]  Isabelle Sagnes,et al.  All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities , 2015 .

[4]  K. Saraswat,et al.  Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence. , 2014, Optics letters.

[5]  K. Saraswat,et al.  (Invited) Light Emission from Highly-Strained Germanium for On-Chip Optical Interconnects , 2014 .

[6]  M. Guzzi,et al.  Ge Crystals on Si Show Their Light , 2014 .

[7]  J. Faist,et al.  Excess carrier lifetimes in Ge layers on Si , 2014 .

[8]  J. Cederberg,et al.  Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering , 2013 .

[9]  J. R. Jain,et al.  Light emission from strained germanium , 2013, Nature Photonics.

[10]  J. Michel,et al.  Analysis of Threshold Current Behavior for Bulk and Quantum-Well Germanium Laser Structures , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[11]  G. Chang,et al.  Optical gain of germanium infrared lasers on different crystal orientations , 2013 .

[12]  Krishna C. Saraswat,et al.  Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping , 2012, IEEE Photonics Journal.

[13]  Jurgen Michel,et al.  Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration , 2012 .

[14]  K. Saraswat,et al.  Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application , 2012 .

[15]  J. Michel,et al.  High phosphorous doped germanium: Dopant diffusion and modeling , 2012 .

[16]  M. Romagnoli,et al.  An electrically pumped germanium laser. , 2012, Optics express.

[17]  Jurgen Michel,et al.  Ge-on-Si optoelectronics , 2012 .

[18]  K. Saraswat,et al.  Strained germanium thin film membrane on silicon substrate for optoelectronics. , 2011, Optics express.

[19]  G. Assanto,et al.  Low-temperature germanium thin films on silicon , 2011 .

[20]  R. Soref.  Mid-infrared photonics in silicon and germanium , 2010 .

[21]  G. Pizzi,et al.  Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells , 2010, Nanotechnology.

[22]  J. Michel,et al.  Toward a Germanium Laser for Integrated Silicon Photonics , 2010, IEEE Journal of Selected Topics in Quantum Electronics.

[23]  G. Fishman,et al.  Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism , 2010 .

[24]  S. Chuang,et al.  Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength. , 2009, Optics express.

[25]  G. Assanto,et al.  Germanium on Silicon for Near-Infrared Light Sensing , 2009, IEEE Photonics Journal.

[26]  M. Guzzi,et al.  Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment , 2009 .

[27]  E. Simoen,et al.  Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si , 2007 .

[28]  Jurgen Michel,et al.  Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. , 2007, Optics express.

[29]  Gerhard Klimeck,et al.  Brillouin-zone Unfolding of Perfect Supercells Having Nonequivalent Primitive Cells Illustrated with a Si/Ge Tight-Binding parameterization , 2007 .

[30]  Jan Vanhellemont,et al.  Comparative Study of Carrier Lifetime Dependence on Dopant Concentration in Silicon and Germanium , 2007 .

[31]  J. Vanhellemont,et al.  Dependence of carrier lifetime in germanium on resisitivity and carrier injection level , 2006 .

[32]  T. Boykin,et al.  Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory , 2002 .

[33]  Gianlorenzo Masini,et al.  Ge-on-Si approaches to the detection of near-infrared light , 1999 .

[34]  S. Laux,et al.  Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .

[35]  Van de Walle Cg.  Band lineups and deformation potentials in the model-solid theory. , 1989 .

[36]  Van de Walle CG.  Band lineups and deformation potentials in the model-solid theory. , 1989, Physical review. B, Condensed matter.