Quantum correction simulation of random dopant-induced threshold voltage fluctuations in nanoscale metal-oxide-semiconductor structures

In this paper, we explore random dopant-induced threshold voltage fluctuations by directly solving quantum correction model for nanoscale metal-oxide-semiconductor field effect transistors (MOSFETs). To calculate the variance of the threshold voltage of nanoscale MOSFETs, quantum correction model at equilibrium conditions is expanded and numerically solved with perturbation and monotone iterative methods. Fluctuations of threshold voltage resulting from the random dopant, variations of gate oxide thickness and epitaxial layer, and the device width are calculated. Classical and quantum mechanical results are provided to support the conclusions drawn from the theoretical findings. In contrast to traditional quantum Monte Carlo approach and small signal analysis of the Schrodinger-Poisson equations, this approach shows good accuracy and computational efficiency, and is ready for industrial technology computer-aided design application.

[1]  Ting-wei Tang,et al.  A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition , 2002 .

[2]  Yiming Li.  A Comparison of Quantum Correction Models for Nanoscale MOS Structures under Inversion Conditions , 2005 .

[3]  K. Takeuchi,et al.  Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[4]  I. Mayergoyz,et al.  Analysis of fluctuations in semiconductor devices through self-consistent Poisson-Schrödinger computations , 2004 .

[5]  M. Ieong,et al.  Monte Carlo modeling of threshold variation due to dopant fluctuations , 1999, 1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).

[6]  H. Wong,et al.  Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 /spl mu/m MOSFET's , 1993, Proceedings of IEEE International Electron Devices Meeting.

[7]  S. Saini,et al.  Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0 . 1m MOSFET ’ s with Epitaxial and-Doped Channels , 1999 .

[8]  Marco Pirola,et al.  Sensitivity‐based optimization and statistical analysis of microwave semiconductor devices through multidimensional physical simulation (invited article) , 1997 .

[9]  W. Fichtner,et al.  Random dopant fluctuation modelling with the impedance field method , 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

[10]  Xinghai Tang,et al.  Scaling limits of Si MOSFET technology imposed by random parameter fluctuations , 1996, 1996 54th Annual Device Research Conference Digest.

[11]  Andrew R. Brown,et al.  Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study , 2001 .

[12]  Kaushik Roy,et al.  Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits , 2005 .

[13]  Kaushik Roy,et al.  Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits , 2005, IEEE Journal of Solid-State Circuits.

[14]  K. Bowman,et al.  Impact of extrinsic and intrinsic parameter fluctuations on CMOS circuit performance , 2000, IEEE Journal of Solid-State Circuits.

[15]  J. Bokor,et al.  Sensitivity of double-gate and FinFETDevices to process variations , 2003 .

[16]  A. Asenov.  Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study , 1998 .

[17]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[18]  Shao-Ming Yu,et al.  A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions , 2004 .

[19]  Yiming Li.  A quantum correction Poisson equation for metal–oxide–semiconductor structure simulation , 2004 .

[20]  S. Saini,et al.  Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and /spl delta/-doped channels , 1999 .

[21]  James D. Plummer,et al.  Dispersion of MOS capacitance-voltage characteristics resulting from the random channel dopant ion distribution , 1994 .

[22]  Vivek De,et al.  Intrinsic MOSFET parameter fluctuations due to random dopant placement , 1997, IEEE Trans. Very Large Scale Integr. Syst..