A ferroelectric memristor based on the migration of oxygen vacancies

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory. However, the application of ferroelectric resistive switching memory is limited by the high operating voltage, the low switching ratio or slow write/read speed. Herein, we show a type of memristor with a thin ferroelectric film, the device can switch its resistance states by controlling the oxygen vacancy migration in the effect of an external electric field. The device still exhibits stable resistive switching phenomena after an endurance test of about 100 cycles and has high switch ratio about 108% and good retention about 1.7 × 105 s. Furthermore, the device has the potential of being a multi-states memory with a low write voltage below 2 V and a fast write/read speed of about 5 μs. Our results suggest new opportunities for the development of high storage density nonvolatile memory.

[1]  Julie Grollier,et al.  Solid-state memories based on ferroelectric tunnel junctions. , 2012, Nature nanotechnology.

[2]  P. Griffin,et al.  Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices , 2007, IEEE Electron Device Letters.

[3]  Ramamoorthy Ramesh,et al.  Thin Film Ferroelectric Materials and Devices , 1997 .

[4]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[5]  Venkatraman Gopalan,et al.  Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors , 2011, 1103.2745.

[6]  M. Lankhorst,et al.  Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[7]  Hermann Kohlstedt,et al.  Tunneling Across a Ferroelectric , 2006, Science.

[8]  Sergei V. Kalinin,et al.  Tunable metallic conductance in ferroelectric nanodomains. , 2012, Nano letters.

[9]  I. Yoo,et al.  Effects of metal electrodes on the resistive memory switching property of NiO thin films , 2008 .

[10]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[11]  Sergei V. Kalinin,et al.  Conduction at domain walls in oxide multiferroics. , 2009, Nature materials.

[12]  Lucian Pintilie,et al.  Ferroelectric polarization-leakage current relation in high quality epitaxial Pb ( Zr , Ti ) O 3 films , 2007 .

[13]  Influence of strain and oxygen vacancies on the magnetoelectric properties of multiferroic bismuth ferrite , 2005, cond-mat/0502364.

[14]  A. Sawa,et al.  Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3 , 2015 .

[15]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[16]  Lin Li,et al.  Low temperature dependent ferroelectric resistive switching in epitaxial BiFeO3 films , 2014 .

[17]  Huibin Lu,et al.  Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films , 2011 .

[18]  M. Alexe,et al.  Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2 Ti 0.8)O3 films. , 2011, ACS nano.

[19]  R. Dittmann,et al.  Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes , 2012 .

[20]  Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories , 2014, 1402.0739.

[21]  J. Valasek.  Piezo-Electric and Allied Phenomena in Rochelle Salt , 1921 .

[22]  Tae Won Noh,et al.  Multilevel Data Storage Memory Using Deterministic Polarization Control , 2012, Advanced materials.

[23]  E. Tsymbal,et al.  Ferroelectric tunnel memristor. , 2012, Nano letters.

[24]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[25]  Yu-Lun Chueh,et al.  ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application. , 2012, ACS nano.