The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique
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[1] Tamara Rudenko,et al. Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC , 2005 .
[2] H. Fjellvåg,et al. Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC , 2005 .
[3] V. Afanas’ev,et al. Band alignment and defect states at SiC/oxide interfaces , 2004 .
[4] J. Damlencourt,et al. Surface preparation and post thermal treatment effects on interface properties of thin Al 2 O 3 films deposited by ALD , 2004 .
[5] M. Melloch,et al. Status and prospects for SiC power MOSFETs , 2002 .
[6] Steven M. George,et al. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates , 2002 .
[7] J. Simmons,et al. Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques , 1974 .
[8] J. Simmons,et al. Thermal Bulk Emission and Generation Statistics and Associated Phenomena in Metal-Insulator-Semiconductor Devices under Non-Steady-State Conditions , 1973 .
[9] W. J. Choyke,et al. Silicon carbide : recent major advances , 2004 .