Update of >300W high power LPP-EUV source challenge IV for semiconductor HVM

The extreme ultraviolet (EUV) light source has been developed together with the lithography EUV scanner. As tool with a 10 W EUV light source, ASML shipped the “a-demo tool” in 20071) and Nikon shipped EUV-1 in 20082). Then ASML developed the b-tool, NXE-3100, at the beginning of 2011 with a 100 W EUV light source.3)4) Requirement of the EUV exposure tool is now covered by the g-tool; NXE3300 (for high volume manufacturing (HVM))5). The required EUV power is 250 W clean power (after purifying infrared (IR) and deep ultra violet (DUV) spectra) at intermediate focus (IF). However, the demonstrated power level was around 80 W6)7) in 2013.

[1]  Koichi Toyoda,et al.  Laser produced EUV light source development for HVM , 2007, SPIE Advanced Lithography.

[2]  Georg Soumagne,et al.  Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources , 2017, Scientific Reports.

[3]  Hiroki Tanaka,et al.  Comparative study on emission characteristics of extreme ultraviolet radiation from CO2 and Nd:YAG laser-produced tin plasmas , 2005 .

[4]  Igor V. Fomenkov,et al.  Industrialization of a robust EUV source for high-volume manufacturing and power scaling beyond 250W , 2018, Advanced Lithography.

[5]  Tsuyoshi Yamada,et al.  Sub-hundred Watt operation demonstration of HVM LPP-EUV source , 2014, Advanced Lithography.

[6]  Tsuyoshi Yamada,et al.  Performance of new high-power HVM LPP-EUV source , 2016, SPIE Advanced Lithography.

[7]  Kazuaki Suzuki,et al.  Nikon EUVL development progress update , 2007, SPIE Advanced Lithography.

[8]  Judon Stoeldraijer,et al.  EUV into production with ASML's NXE platform , 2010, Advanced Lithography.

[9]  Judon Stoeldraijer,et al.  EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100 , 2011, Advanced Lithography.

[10]  John Zimmerman,et al.  EUV lithography with the Alpha Demo Tools: status and challenges , 2007, SPIE Advanced Lithography.

[11]  Takeo Watanabe,et al.  Reflectance measurement of EUV mirrors with s- and p-polarized light using polarization control units , 2018, Photomask Technology.

[12]  Guido Schiffelers,et al.  ASML's NXE platform performance and volume introduction , 2013, Advanced Lithography.

[13]  Georg Soumagne,et al.  Characterization and optimization of tin particle mitigation and EUV conversion efficiency in a laser produced plasma EUV light source , 2011, Advanced Lithography.

[14]  Akira Sumitani,et al.  Development of the reliable 20 kW class pulsed carbon dioxide laser system for LPP EUV light source , 2011, Advanced Lithography.

[15]  Tsuyoshi Yamada,et al.  Performance of 250W high-power HVM LPP-EUV source , 2017, Advanced Lithography.

[16]  Georg Soumagne,et al.  100W 1st generation laser-produced plasma light source system for HVM EUV lithography , 2011, Advanced Lithography.