Transfer Printing of Micron-Size Graphene for Photonic Integrated Circuits and Devices

We demonstrate a new printing method for transferring micron-size graphene films to desired sites on a target substrate. After patterning the graphene layer, a photoresist mask is used to realize a suspended graphene-resist stack. This stack is then transferred toward the desired site on the target substrate using a patterned polydimethylsiloxane (PDMS) stamp in a transfer printing tool. The Raman spectra of the transferred graphene films confirm that no defects are introduced in the process. Si3N4 waveguides with graphene transferred on top exhibit the expected absorption of 0.054 dB/μm. The sheet resistance and contact resistance of graphene transferred on pre-patterned palladium contacts are 398 /sq and 2990 .μm, respectively, comparable to measurements on the original source wafer. These results prove our method enables simple and cost-effective integration of graphene on a semiconductor target wafer, which may expand the application range of graphene for photonics and electronics. © 2017 The Electrochemical Society. [DOI: 10.1149/2.0241707jss] All rights reserved.

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