Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)

The silicon-based electronic technology has made quite a great progress in the past five decades since the invention of the integrated circuit [1]. The advance is maintained primarily through the size scaling of the devices, i.e., metal-oxide-semiconductor field-effect transistor (MOSFET), which has resulted in many successive generations of devices with increased transistor performance and density. In case of the continual decrease for the device dimensions at a present speed, most of scientists forecast that the development of the integrated circuit will meet its physical and theoretical limit soon, perhaps in next decade [2–4]. To keep the device performance continuing to update, the seeking and preparation of new technologies is mandatory [5]. So far, two distinct routes have been taken to address that issue. One of them is to adopt the revolutionary technologies based on totally new concepts, e.g., two-terminal molecular devices [6], quantum computing [7], spintronics [8], and so on. However, these technologies will be incompatible with present application developed from silicon-based electronic industry. In the other case, attention is paid to a more evolutionary approach that is based on the well-established three terminal transistor concept, but utilizes alternative materials, specially single-walled carbon nanotubes (SWCNTs) that possess many unique advantages including onedimensional nanoscale structure as well as the excellent electrical and optical properties [5]. High-mobility, low-defect structure and intrinsic nanometer scale of carbon nanotubes (CNTs) have led to an intense research effort into the viability of utilizing carbon-nanotube field-effect transistors (CNTFETs) as a replacement for, or a complement to, future semiconductor devices [9–17].

[1]  Yoshio Nishi,et al.  DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching. , 2006, Journal of the American Chemical Society.

[2]  David P. DiVincenzo,et al.  Quantum information and computation , 2000, Nature.

[3]  Sheng Wang,et al.  Establishing Ohmic contacts for in situ current–voltage characteristic measurements on a carbon nanotube inside the scanning electron microscope , 2006, Nanotechnology.

[4]  Changxin Chen,et al.  Ultrasonic nanowelding of carbon nanotubes to metal electrodes , 2006 .

[5]  Changxin Chen,et al.  Review on Optimization Methods of Carbon Nanotube Field-Effect Transistors , 2007 .

[6]  S. Tans,et al.  Room-temperature transistor based on a single carbon nanotube , 1998, Nature.

[7]  P. Avouris,et al.  Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown , 2001, Science.

[8]  T. Miyashita,et al.  Poly(N-alkylmethacrylamide) LB films with short-branched alkyl side chains for a self-developed positive photoresist , 2001 .

[9]  Jing Guo,et al.  Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics , 2004 .

[10]  Mario G. Ancona,et al.  High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate , 2005 .

[11]  S. Datta,et al.  Performance projections for ballistic carbon nanotube field-effect transistors , 2002 .

[12]  R. Krupke,et al.  Separation of Metallic from Semiconducting Single-Walled Carbon Nanotubes , 2003, Science.

[13]  C. Dekker,et al.  Logic Circuits with Carbon Nanotube Transistors , 2001, Science.

[14]  Yutaka Ohno,et al.  n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes , 2005 .

[15]  W. Hoenlein,et al.  High-current nanotube transistors , 2004 .

[16]  Changxin Chen,et al.  Carbon nanotube multi-channeled field-effect transistors. , 2006, Journal of nanoscience and nanotechnology.

[17]  Xuedong Hu,et al.  Theoretical perspectives on spintronics and spin-polarized transport , 2000 .

[18]  Jian-sheng Wu,et al.  Manipulation of single-wall carbon nanotubes into aligned molecular layers , 2002 .

[19]  P. Avouris,et al.  Current saturation and electrical breakdown in multiwalled carbon nanotubes. , 2001, Physical review letters.

[20]  M. Radosavljevic,et al.  Carbon nanotubes as potential building blocks for future nanoelectronics , 2002 .

[21]  Supriyo Datta,et al.  Metal–insulator–semiconductor electrostatics of carbon nanotubes , 2002 .

[22]  Michael S. Fuhrer,et al.  High-Mobility Nanotube Transistor Memory , 2002 .

[23]  T. Prisner,et al.  Single crystals of an ionic anthracene aggregate with a triplet ground state , 2000, Nature.

[24]  S. Wind,et al.  Lateral scaling in carbon-nanotube field-effect transistors. , 2003, Physical review letters.

[25]  Sub-20 nm short channel carbon nanotube transistors. , 2004, Nano letters.

[26]  Transistor structures for the study of scaling in carbon nanotubes , 2003 .

[27]  Seiji Akita,et al.  RAPID COMMUNICATION: Orientation and purification of carbon nanotubes using ac electrophoresis , 1998 .

[28]  Larry A. Nagahara,et al.  Directed placement of suspended carbon nanotubes for nanometer-scale assembly , 2002 .

[29]  Jingqi Li,et al.  Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method , 2004 .

[30]  P. Avouris,et al.  Carbon Nanotube Inter- and Intramolecular Logic Gates , 2001 .

[31]  Qian Wang,et al.  Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators , 2002, Nano Letters.

[32]  C Lavoie,et al.  Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. , 2001, Physical review letters.

[33]  Mark S. Lundstrom,et al.  High-κ dielectrics for advanced carbon-nanotube transistors and logic gates , 2002 .

[34]  Hiroshi Iwai,et al.  CMOS downsizing toward sub-10 nm , 2004 .

[35]  S. Rotkin,et al.  Applied physics of carbon nanotubes : fundamentals of theory, optics and transport devices , 2005 .

[36]  Andrew G. Rinzler,et al.  Fibers of aligned single-walled carbon nanotubes: Polarized Raman spectroscopy , 2000 .

[37]  John A Rogers,et al.  Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates. , 2005, Journal of the American Chemical Society.

[38]  J. Knoch,et al.  High-performance carbon nanotube field-effect transistor with tunable polarities , 2005, IEEE Transactions on Nanotechnology.

[39]  K. Roy,et al.  Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure , 2006, IEEE Transactions on Electron Devices.

[40]  Carbon-nanotube field-effect transistors with very high intrinsic transconductance , 2003 .

[41]  Xinqi Chen,et al.  Aligning single-wall carbon nanotubes with an alternating-current electric field , 2001 .

[42]  Hongjie Dai,et al.  Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters , 2000 .

[43]  Changxin Chen,et al.  Manipulation of single-wall carbon nanotubes into dispersively aligned arrays between metal electrodes , 2006 .

[44]  Richard Martel,et al.  Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes , 2002 .

[45]  M. Radosavljevic,et al.  Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors. , 2004, Physical review letters.

[46]  Michael B. Steer,et al.  Physically based molecular device model in a transient circuit simulator , 2006 .

[47]  Eklund,et al.  Solution properties of single-walled carbon nanotubes , 1998, Science.

[48]  P. Avouris,et al.  Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor , 2008, IEEE Electron Device Letters.