INSTITUT FÜR MIKROELEKTRONIK / INSTITUTE FOR MICROELECTRONICS

Since its founding in 1988, the Institute for Microelectronics (IμE) has been a leader in international research, working on topics regarding the simulation of micro and nanoelectronic components, both in basic and application-oriented fields. While the subject areas were strongly influenced by standard silicon technology during the early days of the IμE, the canon of topics has been considerably expanded recently. It was thoroughly stimulated by ever-progressing miniaturisation, during the course of which numerous new materials and component options were researched and modelled. Due to the stark increase in the complexity of the challenges, highly-optimised computer programmes are generally required for theoretical experiments. These technology computer-aided design (TCAD) tools have been developed at the IμE since its founding, and are provided to interested colleagues worldwide. Currently, these computer programmes not only allow for the characterisation of conventional silicon MOS transistors, trigate, and planar nanotransistors, but also many different types of transistors based on III-V semiconductors, quantum dots, resonant tunnel diodes, and quantum cascade lasers and detectors. Furthermore, as part of an ERC Advanced Grant, work began on recording and modelling the behaviour of spin-based components, which offer exciting perspectives for new logic components and non-volatile memory. The development of new components with two-dimensional materials was a particularly hot topic even before the 2010 Nobel Prize was awarded to Novoselov and Geim for researching Die Forschungsschwerpunkte des Instituts für Mikroelektronik (IμE) sind die Modellierung und Simulation moderner Halbleiterbauelemente, Herstellungsprozesse, Verdrahtungsstrukturen sowie deren Zuverlässigkeit.