Stress in hydrogenated amorphous silicon determined by X-ray diffraction
暂无分享，去创建一个
[1] C. Arendse,et al. Influence of growth temperature on the microcrystallinity and native defect structure of hydrogenated amorphous silicon , 2002 .
[2] Bernd Stannowski,et al. Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD , 2002 .
[3] D. Britton,et al. Annealing and recrystallization of hydrogenated amorphous silicon , 2001 .
[4] F. C. Marques,et al. Coefficient of thermal expansion and elastic modulus of thin films , 1999 .
[5] M. Härting. A seminumerical method to determine the depth profile of the three dimensional residual stress state with X-ray diffraction , 1998 .
[6] T. Clyne,et al. Stiffness, residual stresses and interfacial fracture energy of diamond films on titanium , 1997 .
[7] T. Clyne,et al. An analytical model for predicting residual stresses in progressively deposited coatings Part 2: Cylindrical geometry , 1997 .
[8] N. Johnson,et al. Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma , 1992 .
[9] B. Cullity,et al. Elements of X-ray diffraction , 1957 .
[10] Reginald W. James,et al. The Optical principles of the diffraction of X-rays , 1948 .