Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy☆

[1]  G. Mcguire,et al.  Study of the x-ray photoelectron spectrum of tungsten—tungsten oxide as a function of thickness of the surface oxide layer , 1972 .

[2]  J. H. Scofield,et al.  Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV , 1976 .

[3]  B. A. Joyce,et al.  Tin‐doping effects in GaAs films grown by molecular beam epitaxy , 1978 .

[4]  W. A. Dench,et al.  Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids , 1979 .

[5]  F. Alexandre,et al.  Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy , 1980 .

[6]  G. Landgren,et al.  Al-reactions with GaAs (100) surfaces , 1981 .

[7]  W. I. Wang,et al.  Molecular beam epitaxial GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor applications , 1981 .

[8]  A. Gossard,et al.  Alloy Clustering inGa1−xAlxAsCompound Semiconductors Grown by Molecular Beam Epitaxy , 1982 .

[9]  T. Drummond,et al.  Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy , 1982 .

[10]  D. Morgan,et al.  Molecular‐beam epitaxial group III arsenide alloys: Effect of substrate temperature on composition , 1982 .

[11]  Photoemission studies ofAlxGa1−xAs(100) surfaces grown by molecular-beam epitaxy , 1982 .

[12]  P. J. Dobson,et al.  Dynamics of film growth of GaAs by MBE from Rheed observations , 1983 .

[13]  T. Drummond,et al.  Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures , 1983 .

[14]  E. Mendez,et al.  Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs , 1983 .

[15]  R. Fischer,et al.  Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2 , 1983 .

[16]  A. Madhukar,et al.  Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study , 1983 .

[17]  Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy , 1984 .

[18]  Molecular beam epitaxy of In0.53Ga0.47As and InP on InP by using cracker cells and gas cells , 1985 .

[19]  R. Heckingbottom.  Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system , 1985 .

[20]  R. Stall,et al.  Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxy , 1985 .

[21]  J. V. Vechten.  Kinetic segregation of AlAs-GaAs during 〈110〉 MBE , 1985 .

[22]  Electron spectroscopy of vacuum annealing effects on surfaces of some binary and ternary III–V semiconductors , 1985 .

[23]  L. Goldstein,et al.  Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures , 1985 .

[24]  P. Cohen,et al.  Mass‐action control of AlGaAs and GaAs growth in molecular beam epitaxy , 1985 .

[25]  Reflection high‐energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs , 1986 .

[26]  B. F. Lewis,et al.  Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements , 1986 .

[27]  Segregated AlGaAs(110) grown by molecular beam epitaxy , 1986 .