Phosphorus implantation into 4H-SiC at room and elevated temperature

Phosphorus implantation is essential to create localized n-type doped regions in 4H-SiC. The realized profiles may, however, deviate from the desired ones, affecting device properties. In order to characterize typical process parameters and to enable correct prediction of the desired structures, phosphorous implantation into 4H-SiC with a variety of doses and energies is performed at room and elevated temperature. Exemplary post-implantation annealing shows no significant influence on the phosphorus distribution. The as-implanted profiles, analyzed by secondary ion mass spectrometry, show a clear dependence on implantation dose and temperature. High sample temperature at implantation suppresses channeling in case of low and medium doses due to increased lattice vibrations, while crystal damage is restored in case of high doses leading to increased opportunities for channeling, pointing toward different crystal damage and energy loss mechanisms. Finally, the Monte Carlo profiles of the simulation tools stopping and range of ions in matter (SRIM) and Sentaurus Process are critically compared with the experimental profiles.

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