Low power, high gain, low noise amplifier (LNA) for ultra wide‐band applications

One of the important components of a receiver is the low noise amplifier (LNA). The challenges of LNA design include ability to achieve high gain, low noise figure, and better linearity at low power consumption within the required frequency. In this article, our design is based on Impulse Response (IR) Ultra Wide-Band (UWB) transceiver operating at 3.1–4.6 GHz. Hence, the LNA designed has been optimized for low noise figure, considerably high gain and better linearity at low power consumption, which make it suitable for implantable radio application. The process technology used here is 0.25 μm CMOS Silanna process. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1399–1401, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27588

[1]  Trung-Kien Nguyen,et al.  CMOS low-noise amplifier design optimization techniques , 2004, IEEE Transactions on Microwave Theory and Techniques.

[2]  H.R. Rategh,et al.  A 5-GHz CMOS wireless LAN receiver front end , 2000, IEEE Journal of Solid-State Circuits.

[3]  Jun-De Jin,et al.  A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique , 2007, IEEE Microwave and Wireless Components Letters.