论文信息 - Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

4H-SiC epilayers have been achieved by cold wall CVD in the si lane-propane system between 1450°C and 1600°C. The layers have been characterized by AFM , Raman spectroscopy, low temperature photoluminescence (LTPL) and CV measurements. The layers are mirror-like and present a low density of sharp triangular defects. The average defect den sity is 10 per cm. A growth rate of 6μm.h -1 is obtained at 1600°C. A residual doping level of 4.10 14 cm is obtained for a C/Si ratio of ten. When the C/Si ratio is further increa sed (>18), a degradation of the layer morphology is observed.

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