Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of a boost converter circuit, enabled through separate extraction of the parasitic FP contributions. In addition, physical trap-density modeling is verified to be also of key importance for accurate prediction of the power efficiency.

[1]  M. Miura-Mattausch,et al.  Compact modeling of GaN HEMT based on device-internal potential distribution , 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[2]  Daniel Piedra,et al.  High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping , 2013, 2013 IEEE International Electron Devices Meeting.

[3]  Thomas Zimmer,et al.  Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design , 2013, IEEE Transactions on Electron Devices.

[4]  Mitiko Miura-Mattausch,et al.  The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs , 2013, IEEE Transactions on Electron Devices.

[5]  Johan Driesen,et al.  A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon , 2010, 2010 IEEE Energy Conversion Congress and Exposition.

[6]  I. Omura,et al.  Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation , 2007, 2007 IEEE International Electron Devices Meeting.

[7]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[8]  S. Kumashiro,et al.  HiSIM: a drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction , 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

[9]  R. Dimitrov,et al.  Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .

[10]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[11]  H. Zirath,et al.  A new empirical nonlinear model for HEMT and MESFET devices , 1992 .