Multi bridge channel field effect transistor comprising nano-wire channels and method of manufacturing the same

It discloses a MBCFET and its production method includes a plurality of nanowire channel. MBCFET in accordance with one embodiment of the present invention is a field effect transistor having a plurality of the nanowire channel, the active pattern constituting the one field effect transistor are formed be separated from the upper surface of the semiconductor substrate 1 that are spaced apart from each other itdoe pair are disposed apart from each other in between the source / drain patterns of the pair 1 and a source / drain pattern including the wire pattern of the first channel pair, which is parallel to the array in the horizontal direction. Then, the outer surface of it so as to surround the channels in the pattern for one pair and a gate insulating film is formed, a gate electrode is formed between the one pair of the source / drain pattern so as to surround the gate insulating film. 3-D transistors, nanowire, MBCFET, the short channel effect and narrow channel effect, FinFET, GAA transistor