论文信息 - Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process - 字舞流文

Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Y. H. Lin | J. Chyi | J. Kwo | M. Hong | L. Chu | P. Chang | R. Chu | Wei-Chin Lee | C. Fu | M. Chen | G. Brown | W. Hsueh | T. Lin | S. H. Chen