Opto-electronic integrated circuits using the InGaAsP/InP system

Recent developments in opto-electronic integrated circuits (OEICs) using the InGaAsP/InP system which is monolithically integrated with opto-electronic and electronic devices are discussed. The technological problems for the development of the OEICs are explained by reviewing recent developments in OEICs.

[1]  James N. Walpole,et al.  Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers , 1986 .

[2]  Hiroyuki Serizawa,et al.  Operation principle of the InGaAsP/InP laser transistor , 1985 .

[3]  Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasers , 1985 .

[5]  Masato Ishino,et al.  Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers , 1985 .

[6]  Y. Uematsu,et al.  Simultaneous CW Operation of 5-Wavelength Integrated GaInAsP/InP DFB Laser Array with 50 Å Lasing Wavelength Separation , 1984 .

[7]  R. L. Brown,et al.  Integrated external cavity laser , 1986 .

[8]  Osamu Wada,et al.  Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate , 1985 .

[9]  Toshio Katsuyama,et al.  InGaAsP/InP monolithic integrated circuit with lasers and an optical switch , 1986 .

[10]  Carsten Bornholdt,et al.  Waveguide-integrated pin photodiode on InP , 1987 .

[11]  Ikuo Mito,et al.  Progress In narrow-linewidth tunable laser sources , 1987 .

[12]  Y. Sasai,et al.  Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors , 1984 .

[13]  Single longitudinal mode operation of long, integrated passive cavity InGaAsP lasers , 1985 .

[14]  E. Murphy,et al.  Self-alignment technique for fiber attachment to guided wave devices , 1986 .

[15]  D. Wake,et al.  Monolithically integrated InGaAs/InP PIN-JFET photoreceiver , 1986 .

[16]  M. Ito,et al.  Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier , 1984, IEEE Electron Device Letters.

[17]  Y. Sasai,et al.  Fabrication and lasing characteristics of 1.3‐μm InGaAsP multiquantum‐well lasers , 1986 .

[18]  A. Yariv,et al.  Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate , 1978 .

[19]  D. P. Wilt,et al.  Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique , 1986 .