论文信息 - The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.

A. Cavallini | C. Canali | G. Verzellesi | A. Castaldini | A.F. Basile

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