Soft error immune GaAs circuit technologies

Cosmic radiation induced soft errors present a major difficulty for space applications that utilize digital GaAs circuits and systems. Techniques to reduce soft error sensitivity by 5 orders of magnitude or more, to sufficient levels for safe implemention of GaAs ICs in space applications are presented. These results show that the need for redundancy and error correction is eliminated. Space systems will benefit by reduced power and area requirements, plus a substantial improvement in system performance over present radiation hardened silicon-based technologies.

[1]  R. Zuleeg.  Radiation Effects in GaAs Integrated Circuits , 1985 .

[2]  A. B. Campbell,et al.  Single-event phenomena in GaAs devices and circuits , 1996 .

[3]  P. W. Marshall,et al.  SEU design considerations for MESFETs on LT GaAs , 1997 .

[4]  Leonard J. Mahoney,et al.  New MBE (molecular beam epitaxy) buffer used to eliminate backgating in gaas mesfets , 1988 .

[5]  P. Calvel,et al.  Review of commercial spacecraft anomalies and single-event-effect occurrences , 1996 .

[6]  P. W. Marshall,et al.  Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits , 1997 .

[7]  S. Gupta,et al.  Structure and carrier lifetime in LT-GaAs , 1993 .

[8]  Jim Nohava,et al.  Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer , 1995 .

[9]  H. L. Hughes,et al.  Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications , 1996 .

[10]  A. B. Campbell,et al.  Significant reduction in the soft error susceptibility of GaAs field‐effect transistors with a low‐temperature grown GaAs buffer layer , 1995 .

[11]  M. Manfra,et al.  New MBE buffer used to eliminate backgating in GaAs MESFETs , 1988, IEEE Electron Device Letters.

[12]  T. May.  Soft Errors in VLSI: Present and Future , 1979 .

[13]  Cheryl J. Dale,et al.  Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies , 1995 .