Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

[1]  Bo Liu,et al.  Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors , 2015 .

[2]  Wei-min Liu,et al.  Changes in the composition, structure and friction property of sputtered MoS2 films by LEO environment exposure , 2015 .

[3]  S. Banerjee,et al.  Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates , 2015 .

[4]  D. Chi,et al.  Growth of wafer-scale MoS2 monolayer by magnetron sputtering. , 2015, Nanoscale.

[5]  Yun Hee Jang,et al.  Layer-controlled CVD growth of large-area two-dimensional MoS2 films. , 2015, Nanoscale.

[6]  Wonbong Choi,et al.  Growth of large-scale and thickness-modulated MoS₂ nanosheets. , 2014, ACS applied materials & interfaces.

[7]  M. Seong,et al.  Direct vapor phase growth process and robust photoluminescence properties of large area MoS2 layers , 2014, Nano Research.

[8]  Baoming Wang,et al.  Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition , 2014 .

[9]  Jing Zhang,et al.  Scalable growth of high-quality polycrystalline MoS(2) monolayers on SiO(2) with tunable grain sizes. , 2014, ACS nano.

[10]  Yiying Wu,et al.  Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1 , 2014, 1405.2479.

[11]  Takhee Lee,et al.  Photoelectron spectroscopic imaging and device applications of large-area patternable single-layer MoS2 synthesized by chemical vapor deposition. , 2014, ACS nano.

[12]  Il-Kwon Oh,et al.  Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor. , 2014, Nanoscale.

[13]  Xingzhong Zhao,et al.  In situ growth of double-layer MoO3/MoS2 film from MoS2 for hole-transport layers in organic solar cell , 2014 .

[14]  Misun Hong,et al.  Patternable large-scale molybdenium disulfide atomic layers grown by gold-assisted chemical vapor deposition. , 2014, Angewandte Chemie.

[15]  Vikas Varshney,et al.  Thermal anisotropy in nano-crystalline MoS2 thin films. , 2014, Physical chemistry chemical physics : PCCP.

[16]  Arindam Ghosh,et al.  Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. , 2013, Nature nanotechnology.

[17]  D. Jena,et al.  Charge Scattering and Mobility in Atomically Thin Semiconductors , 2013, 1310.7157.

[18]  Gerhard Tröster,et al.  Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate. , 2013, ACS nano.

[19]  K. Tsukagoshi,et al.  Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors. , 2013, Nano letters.

[20]  Xiying Ma,et al.  Thermal Evaporation Deposition of Few-layer MoS2 Films , 2013 .

[21]  Yi Liu,et al.  Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films , 2013, Scientific Reports.

[22]  M. Dresselhaus,et al.  Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. , 2013, Nano letters.

[23]  Liying Jiao,et al.  Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. , 2013, Journal of the American Chemical Society.

[24]  Takhee Lee,et al.  Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors , 2013, Nanotechnology.

[25]  S. Pei,et al.  High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains , 2013, 1303.0086.

[26]  Siddharth Rajan,et al.  Large Area Single Crystal (0001) Oriented MoS2 Thin Films , 2013, 1302.3177.

[27]  M. Strano,et al.  Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide , 2013, Advanced materials.

[28]  Michael S. Fuhrer,et al.  High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects , 2012, 1212.6292.

[29]  Yu-Chuan Lin,et al.  Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. , 2012, Nanoscale.

[30]  J. Kong,et al.  Integrated circuits based on bilayer MoS₂ transistors. , 2012, Nano letters.

[31]  M. Dresselhaus,et al.  A facile tool for the characterization of two-dimensional materials grown by chemical vapor deposition , 2012, Nano Research.

[32]  Jing Kong,et al.  van der Waals epitaxy of MoS₂ layers using graphene as growth templates. , 2012, Nano letters.

[33]  J. Jung,et al.  Intrinsic characteristics of transmission line of graphenes at microwave frequencies , 2012 .

[34]  Bin Liu,et al.  Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.

[35]  Dominique Baillargeat,et al.  From Bulk to Monolayer MoS2: Evolution of Raman Scattering , 2012 .

[36]  K. Latham,et al.  Electrodeposited α- and β-phase MoO3 films and investigation of their gasochromic properties , 2012 .

[37]  K. Latham,et al.  Electrodeposited alpha- and beta-phase MoO3 films and investigation of their gasochromic properties , 2012 .

[38]  Xinran Wang,et al.  Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances , 2012 .

[39]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[40]  Yu‐Chuan Lin,et al.  Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. , 2012, Nano letters.

[41]  Kourosh Kalantar-Zadeh,et al.  Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method. , 2012, Nanoscale.

[42]  P. Ajayan,et al.  Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.

[43]  Hisato Yamaguchi,et al.  Photoluminescence from chemically exfoliated MoS2. , 2011, Nano letters.

[44]  P. Ciambelli,et al.  A Novel Wet Chemistry Approach for the Synthesis of Hybrid 2D Free-Floating Single or Multilayer Nanosheets of MS2@oleylamine (M═Mo, W) , 2011 .

[45]  Bret C. Windom,et al.  A Raman Spectroscopic Study of MoS2 and MoO3: Applications to Tribological Systems , 2011 .

[46]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[47]  S. Perry,et al.  The role of water in modifying friction within MoS2 sliding interfaces. , 2010, ACS applied materials & interfaces.

[48]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[49]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[50]  Michael S. Fuhrer,et al.  Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides , 2007 .

[51]  P. D. Brown,et al.  Shock-absorbing and failure mechanisms of WS2 and MoS2 nanoparticles with fullerene-like structures under shock wave pressure. , 2005, Journal of the American Chemical Society.

[52]  P. Parilla,et al.  Formation of nanooctahedra in molybdenum disulfide and molybdenum diselenide using pulsed laser vaporization. , 2004, The journal of physical chemistry. B.

[53]  P. D. Fleischauer,et al.  A comparison of oxidation and oxygen substitution in MoS2 solid film lubricants , 1999 .

[54]  Reshef Tenne,et al.  Optical-absorption spectra of inorganic fullerenelike MS 2 ÑM5Mo, WÖ , 1998 .

[55]  J. Cheon,et al.  Chemical Vapor Deposition of MoS2 and TiS2 Films From the Metal−Organic Precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4 , 1997 .

[56]  M. R. Hilton,et al.  Oxygen substitution in sputter-deposited MoS2 films studied by extended X-ray absorption fine structure, X-ray photoelectron spectroscopy and X-ray diffraction , 1990 .

[57]  C. Hogarth,et al.  An XPS study of amorphous MoO3/SiO films deposited by co-evaporation , 1990 .

[58]  Wold,et al.  Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy. , 1987, Physical review. B, Condensed matter.

[59]  P. Schmid,et al.  Raman scattering and structural properties of MoO3 , 1977 .

[60]  R. Fivaz,et al.  Mobility of Charge Carriers in Semiconducting Layer Structures , 1967 .

[61]  Mingzhe Yu,et al.  Epitaxial growth of large area single-crystalline few-layer MoS 2 with high space charge mobility of 192 cm 2 V − 1 s − 1 , 2014 .

[62]  Esmat F. Saad Dielectric properties of molybdenum oxide thin films , 2005 .