Investigation on built-in BJT in FD-SOI BIMOS
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[1] S. Cristoloveanu,et al. BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology , 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.
[2] S. Cristoloveanu,et al. Key parameters of BiMOS ESD protection device for UTBB FDSOI advanced technology , 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
[3] Sorin Cristoloveanu,et al. Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices , 1999 .
[4] V. Berland,et al. The ideal NPN vertical BIMOS transistor analytical model simulation and experimental results of the collector current , 1996 .
[5] Jean Jimenez,et al. BIMOS transistor and its applications in ESD protection in advanced CMOS technology , 2012, 2012 IEEE International Conference on IC Design & Technology.
[6] G. Bidal,et al. First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration , 2013, 2013 Symposium on VLSI Circuits.
[7] Sorin Cristoloveanu,et al. Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation , 2017, IEEE Transactions on Electron Devices.
[8] C. Fenouillet-Beranger,et al. ESD protection with BIMOS transistor for bulk & FDSOI advanced CMOS technology , 2013, CAS 2013 (International Semiconductor Conference).