论文信息 - Investigation on built-in BJT in FD-SOI BIMOS

Investigation on built-in BJT in FD-SOI BIMOS

The built-in BJT of a BIMOS fabricated in 28nm UTBB FD-SOI high-k metal technology from ST Microelectronics is investigated in common-emitter mode and in MOSFET off-state. In the weak VBE regime, field-effects dominate, generating a negative base current and making the current gain β0 meaningless. For Vbe high enough, the BJT works normally but with and a very low gain.

Sorin Cristoloveanu | Philippe Galy | Claire Fenouillet-Béranger | Thomas Bédécarrats

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