论文信息 - Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices - 字舞流文

Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices

K. Kashihara | T. Yamaguchi | T. Futase | Y. Hirose | S. Kudo | Y. Ogawa | N. Murata | T. Katayama | K. Asayama | E. Murakami | K. Kihara