The effects of BJT self-heating on circuit behavior

This study demonstrates the circuit and device conditions under which self-heating can significantly affect bipolar junction transistor (BJT) circuit behavior. Simple quantitative measures are supplied that allow estimation of thermally induced errors in BJT small-signal parameters, based on knowledge of the transistor geometry and its Early voltage. It is shown that errors in output admittance and reverse transadmittance can be significant without much power dissipation, especially when the base and emitter driving impedances are small. Other small-signal parameters are less affected unless the power dissipation becomes significant. Thermal effects in large-signal DC analysis can be significant in precision analog circuits that depend on close transistor matching; such circuits can also exhibit long settling-time tails due to long thermal time constants. ECL (emitter-coupled logic) delay is shown to be insensitive to self-heating. These effects are demonstrated through simulations of a variety of circuits using versions of SPICE modified to include physics-based models for thermal impedance. >

[1]  A. L. Palisoc,et al.  Thermal analysis of integrated circuit devices and packages , 1989 .

[2]  R. T. Dennison,et al.  Local thermal effects in high performance bipolar devices/circuits , 1989, Proceedings of the Bipolar Circuits and Technology Meeting.

[3]  E. S. Schlig,et al.  Thermal properties of very fast transistors , 1970 .

[4]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .

[5]  O. Muller,et al.  Thermal feedback in power semiconductor devices , 1970 .

[6]  R. M. Fox,et al.  Thermal parameter extraction for bipolar circuit modelling , 1991 .

[7]  Michael Reisch,et al.  Self-heating in BJT circuit parameter extraction , 1992 .

[8]  J. Hajjar,et al.  Self-heating in high performance bipolar transistors fabricated on SOI substrates , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[9]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[10]  Robert Fox,et al.  Predictive modeling of thermal effects in BJTs , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[11]  D.L. Blackburn,et al.  Thermal characterization of power transistors , 1976, IEEE Transactions on Electron Devices.

[12]  Sang-Gug Lee,et al.  Compact modeling of BJT self-heating in SPICE , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[13]  K. Kaneko,et al.  Simulating the Current Mirror with a Self-Heating BJT Model , 1991 .

[14]  G. Meijer The current dependency of the output conductance of voltage-driven bipolar transistors , 1977 .

[15]  O. Mueller Internal thermal feedback in four–poles especially in transistors , 1964 .

[16]  R.M. Fox,et al.  Scalable small-signal model for BJT self-heating , 1991, IEEE Electron Device Letters.

[17]  P. R. Gray,et al.  Computer simulation of integrated circuits in the presence of electrothermal interaction , 1976 .