High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band

The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<<ETX>>

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