Physics of quantum well solar cells

Incorporating quantum wells into multi-junction III-V solar cells provides a means of adjusting the absorption edge of the component junctions. Further, by using alternating compressive and tensile materials, a strain-balanced stack of quantum well and barrier layers can be grown, defect free, providing absorption-edge / lattice parameter combinations that are inaccessible using bulk materials. Incomplete absorption in the quantum wells has been addressed using a distributed Bragg reflector, extending the optical path length through the cell and enabling photon recycling to take place. State of the art single-junction quantum well solar cells have now reached an efficiency of 27.3% under 500X solar concentration and are projected to reach 34% in a double junction configuration.

[1]  P. Hebert,et al.  Towards commercialization of concentrator multijunction photovoltaic modules , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.

[2]  Nicholas J. Ekins-Daukes,et al.  Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves† , 2002 .

[3]  G. Cody,et al.  Intensity enhancement in textured optical sheets for solar cells , 1982, IEEE Transactions on Electron Devices.

[4]  J. P. Connolly,et al.  Modeling the spectral response of the quantum well solar cell , 1993 .

[5]  J. P. Connolly,et al.  Effect of well number on the performance of quantum-well solar cells , 2005 .

[6]  Y. Okada,et al.  Control of dark currents in multi-quantum well solar cells fabricated by atomic H-assisted molecular beam epitaxy , 2002 .

[7]  J. P. Connolly,et al.  Observation of photon recycling in strain-balanced quantum well solar cells , 2007 .

[8]  M. Pate,et al.  Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p–i–n diodes , 1996 .

[9]  UK,et al.  Efficiency limits of quantum well solar cells , 2010 .

[10]  J. W. Matthews,et al.  Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .

[11]  Y. Okada,et al.  Atomic hydrogen-assisted molecular beam epitaxy for the fabrication of multi-quantum-well solar cells , 1999 .

[12]  C. C. Button,et al.  InGaAs/InGaAs strain-compensated quantum well cells for thermophotovoltaic applications , 2002 .

[13]  J. P. Connolly,et al.  Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells , 2001 .

[14]  M. Pate,et al.  A new approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells , 1996, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.

[15]  Robert R. Alfano,et al.  Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures , 2001 .

[16]  J.S. Roberts,et al.  Strain-balanced materials for high-efficiency solar cells , 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

[17]  J. P. Connolly,et al.  Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications , 2003 .

[18]  M. Wanlass,et al.  Superlattice cascade solar cell , 1982 .

[19]  J. P. Connolly,et al.  Strain-balanced GaAsP/InGaAs quantum well solar cells , 1999 .

[20]  A. Freundlich,et al.  OSCILLATOR STRENGTH OF EXCITONS IN (IN, GA)AS/GAAS QUANTUM WELLS IN THE PRESENCE OF A LARGE ELECTRIC FIELD , 1999 .

[21]  C. C. Button,et al.  Steady-state carrier escape from single quantum wells , 1993 .

[22]  Quantum-Well Structures for Photovoltaic Energy Conversion , 1995 .

[23]  C. C. Button,et al.  Space charge effects in carrier escape from single quantum well structures , 1999 .

[24]  F. Newman,et al.  Strained In/sub 0.53/Ga/sub 0.47/As/In/sub x/Ga/sub 1-x/As (x>0.6) multiquantum well thermophotovoltaic converters , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[25]  J. P. Connolly,et al.  Strain-balanced In/sub 0.62/Ga/sub 0.38/As/In/sub 0.47/Ga/sub 0.53/As(InP) quantum well cell for thermophotovoltaics , 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

[26]  J. David,et al.  Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells , 1996 .

[27]  M. Pate,et al.  Characterization of GaAs/InGaAs quantum wells using photocurrent spectroscopy , 1996 .

[28]  Robert R. Alfano,et al.  IN1-XGAXAS1-YPY/INP MULTIPLE QUANTUM WELL SOLAR CELL STRUCTURES , 1998 .

[29]  D. Law,et al.  40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells , 2007 .

[30]  J. Nelson,et al.  Short‐circuit current and energy efficiency enhancement in a low‐dimensional structure photovoltaic device , 1991 .

[31]  C. Monier,et al.  Critical built-in electric field for an optimum carrier collection in multiquantum well p-i-n diodes , 1999 .

[32]  J. P. Connolly,et al.  Effect of barrier composition and well number on the dark current of quantum well solar cells , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.