Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate
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[1] S. Fan,et al. Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films , 2012, Nano Research.
[2] Shoushan Fan,et al. Superaligned Carbon Nanotube Arrays, Films, and Yarns: A Road to Applications , 2011, Advanced materials.
[3] Z. Z. Chen,et al. Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy , 2011 .
[4] D. H. Kang,et al. Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0001) , 2007 .
[5] N. Grandjean,et al. Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers , 2006 .
[6] Shoushan Fan,et al. Nanotechnology: Spinning continuous carbon nanotube yarns , 2002, Nature.
[7] Kevin Barraclough,et al. I and i , 2001, BMJ : British Medical Journal.
[8] Robert F. Karlicek,et al. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy , 1999 .
[9] James S. Speck,et al. Electrical characterization of GaN p-n junctions with and without threading dislocations , 1998 .
[10] Yoshinobu Aoyagi,et al. Self‐assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant , 1996 .
[11] K. Hiramatsu,et al. Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy , 1994 .