论文信息 - Numerical noise model for the AlGaN/GaN HEMT

Numerical noise model for the AlGaN/GaN HEMT

A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green's function approach, an equivalent of Shockley's impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.

Sungjae Lee | K. Webb | K.J. Webb | Sungjae Lee

[1] Lester F. Eastman,et al. Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs , 2003 .

[2] Peter Russer,et al. An efficient method for computer aided noise analysis of linear amplifier networks , 1976 .

[3] A. Cappy,et al. Noise modeling and measurement techniques (HEMTs) , 1988 .

[4] Fabrizio Bonani,et al. An efficient approach to noise analysis through multidimensional physics-based models , 1998 .

[5] L. Varani,et al. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices , 2000, 7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427).

[6] C. Gontrand,et al. Two-point correlations of diffusion noise sources of hot carriers in semiconductors , 1983 .

[7] J. Nougier. Fluctuations and noise of hot carriers in semiconductor materials and devices , 1994 .

[8] K. Thornber. Some consequences of spatial correlation on noise calculations , 1974 .

[9] Robert W. Dutton,et al. An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs , 2000 .

[10] Hermann A. Haus,et al. Noise characteristics of gallium arsenide field-effect transistors , 1974 .

[11] Lester F. Eastman,et al. Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .