Evaluation of FET performance and restrictions by low-frequency measurements
暂无分享,去创建一个
Franco Giannini | Valeria Vadala | Antonio Raffo | Giorgio Vannini | Claudio Lanzieri | Paolo Colantonio | Alessio Pantellini | Elisa Cipriani | Andrea Nalli | Gianni Bosi | G. Vannini | A. Raffo | F. Giannini | P. Colantonio | C. Lanzieri | V. Vadalà | G. Bosi | A. Nalli | E. Cipriani | A. Pantellini
[1] Valeria Vadala,et al. Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects , 2011 .
[2] Roberto Menozzi,et al. Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown , 2001 .
[3] A. Mediavilla,et al. Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices , 2001 .
[4] Valeria Vadala,et al. Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System , 2010, IEEE Transactions on Microwave Theory and Techniques.
[5] Valeria Vadala,et al. Behavioral Modeling of GaN FETs: A Load-Line Approach , 2014, IEEE Transactions on Microwave Theory and Techniques.