论文信息 - Silicon depletion layer actuators

Silicon depletion layer actuators

The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions.

[1] G.C.M. Meijer,et al. Temperature sensors and voltage references implemented in CMOS technology , 2001, IEEE Sensors Journal.

[2] P. French,et al. The saturation current of silicon bipolar transistors at moderate stress levels and its relation to the energy-band structure , 2004 .

[3] John Bardeen,et al. The Effects of Pressure and Temperature on the Resistance of p-n Junctions in Germanium , 1951 .

[4] W. Rindner,et al. Resistance of Elastically Deformed Shallow p‐n Junctions. II , 1962 .

[5] P. Hansma,et al. A nondestructive method for determining the spring constant of cantilevers for scanning force microscopy , 1993 .

[6] J. Sader,et al. Method for the calibration of atomic force microscope cantilevers , 1995 .

[7] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .

[8] F. S. Hickernell. The piezoelectric semiconductor and acoustoelectronic device development in the sixties , 2005 .

[9] M. R. Freeman,et al. Multifunctional Nanomechanical Systems via Tunably Coupled Piezoelectric Actuation , 2007, Science.

[10] G.C.M. Meijer,et al. The piezojunction effect in silicon sensors and circuits and its relation to piezoresistance , 2001, IEEE Sensors Journal.