High electron mobility InAs nanowire field-effect transistors.
暂无分享,去创建一个
Shadi A Dayeh | E. Yu | P. Yu | S. Dayeh | D. Aplin | Deli Wang | Xiaotian Zhou | Deli Wang | Edward T Yu | David P R Aplin | Paul K L Yu | Xiaotian Zhou | E. Yu
[1] C. Lieber,et al. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species , 2001, Science.
[2] E. Yu,et al. Direct observation of ballistic and drift carrier transport regimes in InAs nanowires , 2006 .
[3] H. F. Mander,et al. Physics of Semiconductor Devices, 2nd Edition, S.M. Sze. Wiley, Amsterdam (1981) , 1982 .
[4] Charles M. Lieber,et al. High Performance Silicon Nanowire Field Effect Transistors , 2003 .
[5] Xiangfeng Duan,et al. Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires , 2001, Science.
[6] Charles M. Lieber,et al. Logic Gates and Computation from Assembled Nanowire Building Blocks , 2001, Science.
[7] Scanned electrical probe characterization of carrier transport behavior in InAs nanowires , 2006 .
[8] Lars Samuelson,et al. Nanowire resonant tunneling diodes , 2002 .
[9] Noguchi,et al. Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces. , 1991, Physical review letters.
[10] Charles M. Lieber,et al. Single-nanowire electrically driven lasers , 2003, Nature.
[11] J. Ziman. Principles of the Theory of Solids , 1965 .
[12] Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect , 2005, cond-mat/0507135.
[13] C. Lieber,et al. Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems , 2003, Science.
[14] Qian Wang,et al. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics , 2003 .
[15] Daihua Zhang,et al. Electronic transport studies of single-crystalline In2O3 nanowires , 2003 .
[16] M. Meyyappan,et al. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor , 2004 .
[17] Younan Xia,et al. One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications , 2003 .
[18] M. Minakata,et al. Magnetoconductance study of inversion layers on InAs metal‐insulator‐semiconductor field‐effect transistors , 1983 .
[19] E. Bakkers,et al. Tunable Supercurrent Through Semiconductor Nanowires , 2005, Science.
[20] Yiying Wu,et al. Room-Temperature Ultraviolet Nanowire Nanolasers , 2001, Science.
[21] Andrew G. Glen,et al. APPL , 2001 .
[22] Charles M. Lieber,et al. Nanoscale Science and Technology: Building a Big Future from Small Things , 2003 .
[23] Charles M. Lieber,et al. Gallium Nitride Nanowire Nanodevices , 2002 .
[24] Charles M. Lieber,et al. Growth of nanowire superlattice structures for nanoscale photonics and electronics , 2002, Nature.
[25] George Saunders,et al. Principles of the Theory of Solids , 1965 .
[26] T. Jackson,et al. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy , 1981 .
[27] Carver A. Mead,et al. Fermi Level Position at Semiconductor Surfaces , 1963 .
[28] Surface chemistry and electrical properties of germanium nanowires. , 2004, Journal of the American Chemical Society.
[29] Yu Huang,et al. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices , 2001, Nature.
[30] R. Rosenfeld. Nature , 2009, Otolaryngology--head and neck surgery : official journal of American Academy of Otolaryngology-Head and Neck Surgery.
[31] Jin Suk Kim,et al. Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors , 2004 .
[32] Peidong Yang,et al. ZnO nanowire transistors. , 2005, The journal of physical chemistry. B.
[33] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[34] Lars Samuelson,et al. Single-electron transistors in heterostructure nanowires. , 2003 .